The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2006
Filed:
Nov. 24, 2004
Heung-jin Joo, Suwon-Si, KR;
Heung-Jin Joo, Suwon-Si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
For forming stacked capacitors, an opening is formed through at least one semiconductor material. A lower electrode material is patterned within the opening to form a plurality of lower electrodes within the opening. The stacked capacitors are formed with the lower electrodes within the opening by depositing a capacitor dielectric and an upper electrode within the opening. With such a relatively large opening, a capacitor dielectric of the stacked capacitors is deposited with a large thickness for improving reliability of the stacked capacitors.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile