The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2006
Filed:
Apr. 09, 2004
Wei-jye Lin, Pingtung, TW;
Ming-jang Lin, Taichung, TW;
Chorng-wei Liaw, Yunlin, TW;
Analog and Power Electronics Corp., Hsinchu, TW;
Abstract
A contact process for a semiconductor device containing a base region of a first conductivity type formed on a semiconductor substrate comprises formation of a first shallow layer of the first conductivity type on the base region, deposition of an insulator on the first shallow layer, etching the insulator and first shallow layer to form a contact hole, thermally driving the first shallow layer more deeply into said base region, formation of a second shallow layer of a second conductivity type on the base region at the bottom of the contact hole, filling a metal in the contact hole to contact the sidewall of the first shallow layer and the second shallow layer.