The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2006

Filed:

Aug. 14, 2003
Applicants:

Peter J. Hopper, San Jose, CA (US);

Philipp Lindorfer, San Jose, CA (US);

Vladislav Vashchenko, Palo Alto, CA (US);

Andy Strachan, Santa Clara, CA (US);

Inventors:

Peter J. Hopper, San Jose, CA (US);

Philipp Lindorfer, San Jose, CA (US);

Vladislav Vashchenko, Palo Alto, CA (US);

Andy Strachan, Santa Clara, CA (US);

Assignee:

National Semiconductor Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A single junction interdigitated photodiode utilizes a stack of alternating highly doped first regions of a first conductivity type and highly doped second regions of a second conductivity type, which are formed below and contact the first regions, to collect photons. In addition, a highly doped sinker of a first conductivity type contacts each first region, and a highly doped sinker of a second conductivity type contacts each second region.


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