The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2006

Filed:

Jun. 06, 2002
Applicants:

Randy J. Shul, Albuquerque, NM (US);

Christi G. Willison, Albuquerque, NM (US);

W. Kent Schubert, Albuquerque, NM (US);

Ronald P. Manginell, Albuquerque, NM (US);

Mary-anne Mitchell, Edgewood, NM (US);

Paul C. Galambos, Albuquerque, NM (US);

Inventors:

Randy J. Shul, Albuquerque, NM (US);

Christi G. Willison, Albuquerque, NM (US);

W. Kent Schubert, Albuquerque, NM (US);

Ronald P. Manginell, Albuquerque, NM (US);

Mary-Anne Mitchell, Edgewood, NM (US);

Paul C. Galambos, Albuquerque, NM (US);

Assignee:

Sandia Corporation, Albuquerque, NM (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

New methods for fabrication of silicon microstructures have been developed. In these methods, an etching delay layer is deposited and patterned so as to provide differential control on the depth of features being etched into a substrate material. Compensation for etching-related structural artifacts can be accomplished by proper use of such an etching delay layer.


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