The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2006
Filed:
Jun. 20, 2003
Jae-cheol Lee, Suwon, KR;
Chang-bin Lim, Seoul, KR;
Kwi-young Han, Yongin, KR;
Samsung Electronics Co., Ltd., Suwon, KR;
Abstract
A reaction apparatus for atomic layer deposition includes a vacuum chamber having a gas inlet, a gas outlet, and a gas flow path for connecting the gas inlet and the gas outlet; a reactor located in the vacuum chamber, including a reaction chamber where a first gas, which is input through the gas flow path, reacts with a specimen in the reaction chamber, the reactor further including a gas distributor, which is located in the reaction chamber to evenly supply the gas; a specimen location controller for moving the specimen located in the vacuum chamber to the reaction chamber; and an analyzer, which is connected to the reaction chamber, for analyzing a second gas generated in the reaction chamber. The apparatus is able to deposit uniform atomic layers on a specimen by maintaining the pressure and flow of reactant gas and can deposit and analyze an atomic layer simultaneously.