The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2006
Filed:
Feb. 13, 2003
Applicants:
Lyle C. Winterton, Moses Lake, WA (US);
John P. Hill, Moses Lake, WA (US);
Inventors:
Lyle C. Winterton, Moses Lake, WA (US);
John P. Hill, Moses Lake, WA (US);
Assignee:
REC Silicon Inc., Moses Lake, WA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 25/12 (2006.01); C30B 25/14 (2006.01);
U.S. Cl.
CPC ...
Abstract
Polysilicon dendrites are grown by depositing silicon on a polysilicon rod or other substrate. Surface temperature is increased to a temperature at which needle-like dendrites develop due to the deposition of silicon from silicon-containing molecules in the surrounding reactor atmosphere. Thereafter, the surface temperature is gradually reduced so that silicon that deposits on the needle-like dendrites causes the dendrites to grow and assume a generally flared shape.