The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2006
Filed:
Aug. 27, 2003
Michael K. Aghajanian, Newark, DE (US);
Allyn L. Mccormick, Lewes, DE (US);
Michael K. Aghajanian, Newark, DE (US);
Allyn L. McCormick, Lewes, DE (US);
Other;
Abstract
Silicon infiltration technology, e.g., siliconizing or reaction-bonding, is used to produce ceramic-rich composite bodies having utility as ballistic armor. In the main embodiment of the invention, the ballistic armor includes a reaction-bonded silicon carbide body (RBSC). Good ballistic performance can be advanced by loading the porous mass or preform to be infiltrated to a high degree with one or more hard fillers, and by limiting the size of the morphological features making up the composite body. This control of 'grain size' can be accomplished by controlling the size of the largest particles making up the porous mass to be infiltrated, but also of importance is controlling the processing conditions, particularly by controlling the factors that cause grain growth, coarsening of microstructure, and/or grain coalescence.