The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2006
Filed:
Mar. 23, 2004
Hideaki Fujiwara, Tsukuba, JP;
Akira Toriumi, Yokohama, JP;
Hideaki Fujiwara, Tsukuba, JP;
Akira Toriumi, Yokohama, JP;
Sanyo Electric Co., Ltd., Osaka, JP;
National Institute of Advanced Industrial Science and Technology, Tokyo, JP;
Abstract
A semiconductor device capable of inhibiting a threshold voltage from increase also when employing a gate electrode consisting of a metal is provided. This semiconductor device comprises a pair of source/drain regions lifted up in an elevated structure, a gate insulator film, formed on a channel region, consisting of a high dielectric constant insulator film having a dielectric constant larger than 3.9 and a gate electrode including a first metal layer coming into contact with the gate insulator film and having a work function controlled to have a Fermi level around the energy level of a band gap end of silicon constituting the source/drain regions.