The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2006
Filed:
Apr. 04, 2003
Francine Y. Robb, Tempe, AZ (US);
Jeffrey Pearse, Chandler, AZ (US);
David M. Heminger, Mesa, AZ (US);
Stephen P. Robb, Tempe, AZ (US);
Francine Y. Robb, Tempe, AZ (US);
Jeffrey Pearse, Chandler, AZ (US);
David M. Heminger, Mesa, AZ (US);
Stephen P. Robb, Tempe, AZ (US);
Semiconductor Components Industries L.L.C., Phoenix, AZ (US);
Abstract
A method of providing a Transient Voltage Suppression (TVS) device is described utilizing a Metal Oxide Semiconductor (MOS) structure and an Insulated Gate Bipolar Transistor (IGBT) structure. The MOS based TVS devices offer reduced leakage current with reduced clamp voltages between 0.5 and 5 volts. Trench MOS based TVS device () provides an enhanced gain operation, while device () provides a top side drain contact. The high gain MOS based TVS devices provide increased control over clamp voltage variation.