The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 05, 2006
Filed:
Jan. 23, 2004
Vitaly Shchukin, Berlin, DE;
Nikolai Ledentsov, Berlin, DE;
Vitaly Shchukin, Berlin, DE;
Nikolai Ledentsov, Berlin, DE;
NL Nanosemiconductor GmbH, Dortmund, DE;
Abstract
A semiconductor device includes at least one defect-free epitaxial layer. At least a part of the device is manufactured by a method of fabrication of defect-free epitaxial layers on top of a surface of a first solid state material having a first thermal evaporation rate and a plurality of defects, where the surface comprises at least one defect-free surface region, and at least one surface region in a vicinity of the defects, the method including the steps of selective deposition of a second material, having a high temperature stability, on defect-free regions of the first solid state material, followed by subsequent evaporation of the regions in the vicinity of the defects, and subsequent overgrowth by a third material forming a defect-free layer.