The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 29, 2006

Filed:

Dec. 30, 2003
Applicants:

Haeng-sook RO, Seoul, KR;

Jae-seung Yun, Daejon, KR;

Soon-ik Jeon, Daejon, KR;

Chang-joo Kim, Daejon, KR;

Inventors:

Haeng-Sook Ro, Seoul, KR;

Jae-Seung Yun, Daejon, KR;

Soon-Ik Jeon, Daejon, KR;

Chang-Joo Kim, Daejon, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04M 1/00 (2006.01); H04Q 1/38 (2006.01); H04Q 19/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A microstrip patch antenna having high gain and wide band is disclosed. The microstrip patch antenna includes: a first patch antenna layer for radiating a energy supplied from transmitting/receiving feeding circuit and a first radiation patch electrically coupled to the first dielectric layer and supplying the energy to a receiving feeding circuit electrically coupled with the first radiation patch, wherein the energy is supplied by electromagnetic coupling of a first parasitic patch and second parasitic patch; a second patch antenna layer for improving impedance bandwidth of energy received through the first parasitic patch arranged in between the second dielectric layer and the third dielectric layer and radiating the improved impedance bandwidth; and a third patch antenna layer for improving a gain of the energy received through the second parasitic patch arraigned in between the fourth dielectric layer and the fifth dielectric layer.


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