The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2006
Filed:
Dec. 31, 2003
Applicants:
Jin-hong Ahn, Ichon-shi, KR;
Sang-hoon Hong, Ichon-shi, KR;
Young-june Park, Ichon-shi, KR;
Sang-don Lee, Ichon-shi, KR;
Yil-wook Kim, Ichon-shi, KR;
Gi-hyun Bae, Ichon-shi, KR;
Inventors:
Jin-Hong Ahn, Ichon-shi, KR;
Sang-Hoon Hong, Ichon-shi, KR;
Young-June Park, Ichon-shi, KR;
Sang-Don Lee, Ichon-shi, KR;
Yil-Wook Kim, Ichon-shi, KR;
Gi-Hyun Bae, Ichon-shi, KR;
Assignee:
Hynix Semiconductor Inc., , KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/24 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for operating a non-volatile dynamic random access memory (NVDRAM) device having a plurality of memory cells, each cell having a capacitor and a transistor having a floating gate includes the steps of (A) preparing a power-on mode for performing a DRAM operation; and (B) preparing a power-off mode for holding stored data in the memory cell.