The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2006
Filed:
Dec. 18, 2001
Andrea Zappettini, Reggio Emilia, IT;
Silvia Maria Pietralunga, Cassina de Pecchi, IT;
Enos Gombia, Reggio Emilia, IT;
Andrea Zappettini, Reggio Emilia, IT;
Silvia Maria Pietralunga, Cassina de Pecchi, IT;
Enos Gombia, Reggio Emilia, IT;
Pirelli & C. S.p.A., Milan, IT;
Abstract
An electro-optic (EO) device having a high-resistivity semiconducting crystal and a method of operating such a device. The local shielding of the externally applied field lowers the EO effect, which can be partially or completely inhibited particularly in the low-frequency regime, i.e., less than about 10Hz. By holding a high-resistivity semiconducting crystal at a suitable temperature, EO response and efficiency are improved, in particular for light signals that are non-modulated or modulated at low frequencies. Preferably, the temperature at which the semiconducting crystal is held during functioning is between 50 and 150° C. Enhancement of the EO effect has been demonstrated also for EO devices operating at relatively large optical powers, i.e., larger than about 0.1 mW.