The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2006
Filed:
Jan. 02, 2004
Applicants:
Peter J. Zdebel, Austin, TX (US);
Diann Michelle Dow, Austin, TX (US);
Inventors:
Peter J. Zdebel, Austin, TX (US);
Diann Michelle Dow, Austin, TX (US);
Assignee:
Semiconductor Components Industries, L.L.C., Phoenix, AZ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/62 (2006.01); H01L 29/72 (2006.01); H01L 29/74 (2006.01); H01L 31/111 (2006.01); H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
In one embodiment, a concentric ring ESD structure includes a first p-type region and a second p-type region are formed in a layer of semiconductor material. The two p-type regions are coupled together with a floating n-type buried layer. The first and second p-type regions form a back-to-back diode structure with the floating n-type buried layer. A pair of shorted n-type and p-type contact regions is formed in each of the first and second regions. An isolation region is formed between the first and second p-type regions.