The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2006
Filed:
Feb. 05, 2003
Weiran Kong, Sunnyvale, CA (US);
Bernard Ho, Fremont, CA (US);
David Greenhill, Portola Valley, CA (US);
Sudhakar Bobba, Sunnyvale, CA (US);
Weiran Kong, Sunnyvale, CA (US);
Bernard Ho, Fremont, CA (US);
David Greenhill, Portola Valley, CA (US);
Sudhakar Bobba, Sunnyvale, CA (US);
Sun Microsystems, Inc., Santa Clara, CA (US);
Abstract
A capacitor structure in a semiconductor device is provided. The capacitor structure includes a first power rail on a topmost level of the semiconductor device, and a second power rail on the topmost level of the semiconductor device. The capacitor structure also includes a dielectric layer disposed over at least a portion of one of the first power rail and the second power rail. The capacitor structure further includes a conductive layer disposed over and between the first power rail and the second power rail where the conductive layer is in electrical contact with the power rail not having the dielectric layer, and the conductive layer is disposed over the dielectric layer.