The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2006
Filed:
Jul. 26, 2004
Jijun Sun, Chandler, AZ (US);
Renu W. Dave, Chandler, AZ (US);
Jon M. Slaughter, Tempe, AZ (US);
Johan Akerman, Gilbert, AZ (US);
JiJun Sun, Chandler, AZ (US);
Renu W. Dave, Chandler, AZ (US);
Jon M. Slaughter, Tempe, AZ (US);
Johan Akerman, Gilbert, AZ (US);
Freescale Semiconducor, Inc., Austin, TX (US);
Abstract
Magnetic tunnel junction ('MTJ') element structures and methods for fabricating MTJ element structures are provided. An MTJ element structure may comprise a crystalline pinned layer, an amorphous fixed layer, and a coupling layer disposed between the crystalline pinned layer and the amorphous fixed layer. The amorphous fixed layer is antiferromagnetically coupled to the crystalline pinned layer. The MTJ element further comprises a free layer and a tunnel barrier layer disposed between the amorphous fixed layer and the free layer. Another MTJ element structure may comprise a pinned layer, a fixed layer and a non-magnetic coupling layer disposed therebetween. A tunnel barrier layer is disposed between the fixed layer and a free layer. An interface layer is disposed adjacent the tunnel barrier layer and a layer of amorphous material. The first interface layer comprises a material having a spin polarization that is higher than that of the amorphous material.