The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2006
Filed:
Jul. 03, 2002
Tatsuya Morioka, Ikoma, JP;
Shigeki Hayashida, Nara, JP;
Yoshihiko Tani, Tenri, JP;
Isamu Ohkubo, Kashiba, JP;
Tatsuya Morioka, Ikoma, JP;
Shigeki Hayashida, Nara, JP;
Yoshihiko Tani, Tenri, JP;
Isamu Ohkubo, Kashiba, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A plurality of N-type diffusion layers are formed a specified distance apart on a P-type semiconductor layer. A P-type leak prevention layer formed between at least N-type diffusion layers prevents leaking between the diffusion layers. A dielectric film is formed in at least a light incident area on a P-type semiconductor layer including the diffusion layers and the leak prevention layer. Accordingly, provided are a split type light receiving element positively functioning as a split type light receiving element even when charge is accumulated in the dielectric film and having a uniform sensitivity throughout the entire area on a light receiving surface, and a circuit-built-in light receiving element and an optical disk device using the split type light receiving element.