The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2006
Filed:
Dec. 29, 2004
Applicant:
Jung Joo Kim, Bucheon, KR;
Inventor:
Jung Joo Kim, Bucheon, KR;
Assignee:
Dongbu Electronics Co., Ltd., Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/44 (2006.01); H01L 21/441 (2006.01); H01L 21/443 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of fabricating a semiconductor device is provided, by which oxide on a Cu surface after via-etch can be removed using Hf (hafnium) as a barrier material. The method includes the steps of forming a Cu line in at least one protective insulating layer on a substrate, forming a via hole in the protective insulating layer to expose a portion of the Cu line, forming an Hf-containing layer in the via hole to cover the exposed portion of the embedded Cu line, and forming a conductive layer over the Hf-containing layer.