The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2006
Filed:
Apr. 13, 2004
Junichi Suzuki, Kanagawa, JP;
Kohji Kanamori, Kanagawa, JP;
Junichi Suzuki, Kanagawa, JP;
Kohji Kanamori, Kanagawa, JP;
NEC Electronics Corporation, Kanagawa, JP;
Abstract
A silicon layer doped with an impurity for a floating gate, a protective layer, a silicon nitride layer of a laminated hard mask and a first NSG layer are formed into a desired pattern, on which a second NSG layer is formed and left as a side wall. With the second NSG layer as a mask, the silicon nitride layer is etched. Using the remaining silicon nitride layer as a mask, the silicon layer is etched to form a silicon pattern whose surface is covered with a second protective layer, and the silicon nitride layer is etched out. Accordingly, it is possible to prevent a damage at the surface of the floating gate at the time of forming the floating gate using doped polysilicon.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile