Method of fabricating poly-silicon thin film transistor using metal induced lateral crystallization

Abstract

A method of fabricating a thin film transistor using a metal induced lateral crystallization is provided. The thin film transistor fabrication method includes the steps of: forming an amorphous silicon film on an insulation substrate, and then patterning the amorphous silicon film, to thereby form a semiconductor layer; sequentially forming a gate insulation film and a gate electrode on the substrate, and forming a photosensitive film pattern for forming the gate electrode, and then over-etching the gate electrode by a wet etching process; dry-etching the gate insulation film and then patterning the dry-etched gate insulation film again by the wet etching process; removing the photosensitive film pattern; and ion-injecting high-concentration impurities into the semiconductor layer to thus form a source/drain region and a lightly doped drain (LDD) structure simultaneously. When a thin film transistor is fabricated according to the above-described steps, an off-set and LDD structure essential for the thin film transistor can be effectively formed without requiring for an additional mask process.