The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2006
Filed:
Dec. 13, 2004
James W. Adkisson, Jericho, VT (US);
Mark D. Jaffe, Shelburne, VT (US);
Arthur P. Johnson, Essex Junction, VT (US);
Robert K. Leidy, Burlington, VT (US);
Jeffrey C. Maling, Grand Isle, VT (US);
James W. Adkisson, Jericho, VT (US);
Mark D. Jaffe, Shelburne, VT (US);
Arthur P. Johnson, Essex Junction, VT (US);
Robert K. Leidy, Burlington, VT (US);
Jeffrey C. Maling, Grand Isle, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A novel image sensor structure formed on a substrate of a first conductivity type includes a photosensitive device of a second conductivity type and a surface pinning layer of the first conductivity type. A trench isolation region is formed adjacent to the photosensitive device pinning layer. The structure includes a dopant region comprising material of the first conductivity type formed along a sidewall of the isolation region that is adapted to electrically couple the pinning layer to the substrate. The corresponding method facilitates an angled ion implantation of dopant material in the isolation region sidewall by first fabricating the photoresist layer and reducing its size by removing a corner, or a corner portion thereof, which may block the angled implant material. To facilitate the angled implant to the sidewall edge past resist block masks, two methods are proposed: 1) a spacer type etch of the imaged photoresist; or, 2) a corner sputter process of the imaged photoresist.