The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2006
Filed:
Sep. 23, 2003
Shuichi Hirukawa, Nara, JP;
Shuichi Hirukawa, Nara, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
Immediately after stacking of a barrier layer formed of GaAsP of a multiple-strain quantum well active layerat a growth temperature of 650° C., a second upper guide layerformed of AlGaAs is stacked. This second upper guide layeris grown while the temperature is kept at 650° C., which is a growth temperature suitable for P-based layers. By reducing the desorption of P from the barrier layer, the roughness level of the interface between the barrier layer and the second upper guide layeris lowered to 20 Å or less. Thereafter, a first upper guide layeris stacked. Growth temperature of this first upper guide layer, which is 650° C. at a start of the growth, is started to be increased concurrently with the growth, and gradually elevated until an end of the growth so as to reach 750° C. at the end of the growth.