The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2006
Filed:
Dec. 23, 2003
Mamoru Miyachi, Saitama-ken, JP;
Atsushi Watanabe, Saitama-ken, JP;
Hirokazu Takahashi, Saitama-ken, JP;
Yoshinori Kimura, Sitama-ken, JP;
Mamoru Miyachi, Saitama-ken, JP;
Atsushi Watanabe, Saitama-ken, JP;
Hirokazu Takahashi, Saitama-ken, JP;
Yoshinori Kimura, Sitama-ken, JP;
Pioneer Corporation, Tokyo, JP;
Abstract
A semiconductor laser device comprises: a first light-emitting element having a first laser part, an insulating layer, and an ohmic electrode layer; and a second light-emitting element having a second laser part, an insulating layer, and an ohmic electrode layer. The first laser part has a ridge waveguide, and is formed by stacking thin films of group-III nitride compound semiconductors (for example, GaN-based semiconductors). The second laser part has a ridge waveguide, and is formed by stacking thin films of group III–V compound semiconductors (such as GaAs). The first laser part and the second laser part are integrally bonded to each other by the interposition of an adhesive metal layer which is formed between the ohmic electrode layers. This provides the semiconductor laser device with a small distance between the light-emitting spots of the laser parts.