The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2006
Filed:
Jan. 13, 2005
Victor G. Karpov, Toledo, OH (US);
Yann Roussillon, Mountain View, CA (US);
Diana Shvydka, Toledo, OH (US);
Alvin D. Compaan, Holland, OH (US);
Dean M. Giolando, Toledo, OH (US);
Victor G. Karpov, Toledo, OH (US);
Yann Roussillon, Mountain View, CA (US);
Diana Shvydka, Toledo, OH (US);
Alvin D. Compaan, Holland, OH (US);
Dean M. Giolando, Toledo, OH (US);
University of Toledo, Toledo, OH (US);
Abstract
A method of making a photovoltaic device using light energy and a solution to normalize electric potential variations in the device. A semiconductor layer having nonuniformities comprising areas of aberrant electric potential deviating from the electric potential of the top surface of the semiconductor is deposited onto a substrate layer. A solution containing an electrolyte, at least one bonding material, and positive and negative ions is applied over the top surface of the semiconductor. Light energy is applied to generate photovoltage in the semiconductor, causing a redistribution of the ions and the bonding material to the areas of aberrant electric potential. The bonding material selectively bonds to the nonuniformities in a manner such that the electric potential of the nonuniformities is normalized relative to the electric potential of the top surface of the semiconductor layer. A conductive electrode layer is then deposited over the top surface of the semiconductor layer.