The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 7098052 B1

PDF
Full Text
Expired
Date of Patent:
Aug. 29, 2006

Filed:

Mar. 27, 2002
Applicant:

Victor Higgs, Hemel Hempstead, GB;

Inventor:

Victor Higgs, Hemel Hempstead, GB;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method and apparatus for the detection and classification defects in a silicon or semi-conductor structure, in particular using room temperature photoluminescence effects, is described. The method involves directing a high intensity beam of light at a surface of a sample of silicon or semi-conductor structure to be tested producing a photoluminescence image, producing a reflected light image, combining the information in the two images to detect, map and identify and/or characterize micro-defects in the silicon or semi-conductor structure.


Find Patent Forward Citations

Higgs, Victor. (2006). Detection and classification of micro-defects in semi-conductors (U.S. Patent No. 7098052). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7098052

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