The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2006
Filed:
Oct. 17, 2003
Dong-hyun Kim, Seoul, KR;
Moon-hyun Yoo, Suwon, KR;
Jeong-lim Nam, Yongin, KR;
Yoo-hyon Kim, Seoul, KR;
Chul-hong Park, Yongin, KR;
Soo-han Choi, Suwon, KR;
Young-chan Ban, Yongin, KR;
Hye-soo Shin, Seoul, KR;
Dong-Hyun Kim, Seoul, KR;
Moon-Hyun Yoo, Suwon, KR;
Jeong-Lim Nam, Yongin, KR;
Yoo-Hyon Kim, Seoul, KR;
Chul-Hong Park, Yongin, KR;
Soo-Han Choi, Suwon, KR;
Young-Chan Ban, Yongin, KR;
Hye-Soo Shin, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A phase edge phase shift mask and a fabrication method thereof for enforcing a width of a field gate image located on a field region, which is weakened by a two exposure process, by using a phase shift mask and a trim mask on a semiconductor substrate, and enforcing a width of the field gate image to maximize a current driving capability of the semiconductor device.