The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2006
Filed:
Mar. 02, 2005
Gregory Costrini, Hopewell Junction, NY (US);
John P. Hummel, Verbank, NY (US);
George Stojakovic, Wappinger Falls, NY (US);
Kia-seng Low, Hopewell Junction, NY (US);
Gregory Costrini, Hopewell Junction, NY (US);
John P. Hummel, Verbank, NY (US);
George Stojakovic, Wappinger Falls, NY (US);
Kia-Seng Low, Hopewell Junction, NY (US);
Infineon Technologies AG, Munich, DE;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming a magnetic switching device is provided. The method includes depositing a bilayer hardmask, which may comprise a first mask layer of titanium nitride with a second mask layer of tungsten formed thereon. A first lithography process is performed to pattern the second mask layer, and a second lithography process is performed to pattern the first mask layer. Thereafter, the magnetic tunnel junction stack may be patterned in accordance with the first mask layer. An etching process may be performed to further pattern the first mask layer in accordance with the second mask layer. An optional passivation layer may be formed over the first mask layer and the second mask layer.