The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2006
Filed:
Aug. 20, 2002
Robert Graham Clark, Balgowlah Heights, AU;
Neil Jonathan Curson, Coogee, AU;
Toby Hallam, Enmore, AU;
Lars Oberbeck, Coogee, AU;
Steven Richard Schofield, Randwick, AU;
Michelle Yvonne Simmons, Coogee, AU;
Robert Graham Clark, Balgowlah Heights, AU;
Neil Jonathan Curson, Coogee, AU;
Toby Hallam, Enmore, AU;
Lars Oberbeck, Coogee, AU;
Steven Richard Schofield, Randwick, AU;
Michelle Yvonne Simmons, Coogee, AU;
Qucor Pty Ltd., Sydney, AU;
Abstract
This invention concerns nanoscale products, such as electronic devices fabricated to nanometer accuracy. It also concerns atomic scale products. These products may have an array of electrically active dopant atoms in a silicon surface, or an encapsulated layer of electrically active donor atoms. In a further aspect the invention concerns a method of fabricating such products. The methods include forming a preselected array of donor atoms incorporated into silicon. Encapsulation by growing silicon over a doped surface, after desorbing the passivating hydrogen. Also, using an STM to view donor atoms on the silicon surface during fabrication of a nanoscale device, and measuring the electrical activity of the donor atoms during fabrication of a nanoscale device. Such products and processes are useful in the fabrication of a quantum computer, but could have many other uses.