The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2006
Filed:
Apr. 14, 2004
Hiroki Sakurai, Yokohama, JP;
Hiroshi Tomita, Yokohama, JP;
Hiroki Sakurai, Yokohama, JP;
Hiroshi Tomita, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
Disclosed is a manufacturing method of an integrated capacitor including: forming a hole in a semiconductor substrate; depositing a dielectric film on an inner face of the formed hole; heat-treating the deposited dielectric film; depositing a silicon film on the dielectric film; embedding a resist film in the hole except an upper portion of the inner face of the hole on which the dielectric film and the silicon film are deposited; etching the silicon film on the heat-treated dielectric film with the embedded resist film as a mask; removing the resist film; removing the heat-treated dielectric film by etching with the silicon film remaining after the etching as a mask; and embedding an electrode material in the hole having the dielectric film remaining after the removal by etching, and the integrated capacitor.