The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2006
Filed:
Dec. 30, 2002
Peter John Mahon, Australian Capital Territory, AU;
Clodoveo Simone Sacchetta, New South Wales, AU;
Calum John Drummond, Sydney, AU;
Phillip Brett Aitchison, Sydney, AU;
Peter John Mahon, Australian Capital Territory, AU;
Clodoveo Simone Sacchetta, New South Wales, AU;
Calum John Drummond, Sydney, AU;
Phillip Brett Aitchison, Sydney, AU;
Energy Storage Systems PTY LTD, Lane Cove, AU;
Abstract
An electrode for an energy storage device, including a substrate of at least one metal that forms a native oxide layer; and a treated layer formed on the substrate from the native oxide layer, the treated layer having a resistance that is less than the resistance of a native oxide layer. In some embodiments, the treated layer possesses at least one of the following properties: includes one or more dopants, is thinner than the native oxide layer, has a carbon coating that is applied to the treated layer which improved adhesion characteristics, and others. Further, there is an energy storage device having two or more of such electrodes, wherein the device has a low initial ESR and/or a low ESR at various intervals. Moreover, disclosed is a low resistance metal including a substrate of at least one metal that forms a native oxide layer; and a treated layer formed on the substrate from the native oxide layer, the treated layer having a resistance that is less than the resistance of a native oxide layer. Additionally, methods relating to the above devices are also disclosed.