The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2006
Filed:
Sep. 29, 2004
Applicant:
Martin Verhoeven, Radebeul, DE;
Inventor:
Martin Verhoeven, Radebeul, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
Abstract
In a charge trapping memory cell, programming occurs by trapping hot electrons from the channel region in a storage layer. The erasure occurs by Fowler-Nordheim tunneling of the electrons through the lower boundary layer to source or drain or preferably through the upper boundary layer into the gate electrode. The boundary layers are preferably aluminum oxide.
Quick Actions:
Verhoeven, Martin. (2006). Charge trapping memory cell (U.S. Patent No. 7095078). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7095078
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