The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2006
Filed:
Mar. 28, 2002
Shinichi Nagahama, Anan, JP;
Tomoya Yanamoto, Anan, JP;
Shinichi Nagahama, Anan, JP;
Tomoya Yanamoto, Anan, JP;
Nichia Corporation, Tokushima, JP;
Abstract
In a nitride semiconductor device having an active layerbetween a first electrically conductive type of layer and a second electrically conductive type of layer, a quantum well structure is adopted in which an active layerhas at least a well layerformed of a nitride semiconductor containing In and Al and a barrier layerformed of a nitride semiconductor containing Al, whereby a laser device excellent in emitting efficacy at a short wavelength region is obtained. It is particularly preferable that said well layeris formed of AlInGaN (0<x≦1<0<y≦1, x+y<1) and said barrier layeris formed of AlInGaN (0<u≦1, 0≦v≦1, u+v<1). Such a light emitting device is realized to obtain excellent efficacy in emitting light of short wavelength in a region of 380 nm.