The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2006
Filed:
Mar. 02, 2004
Katsuya Oda, Hachioji, JP;
Nobuyuki Sugii, Tokyo, JP;
Makoto Miura, Kokubunji, JP;
Isao Suzumura, Kokubunji, JP;
Katsuyoshi Washio, Tokorozawa, JP;
Katsuya Oda, Hachioji, JP;
Nobuyuki Sugii, Tokyo, JP;
Makoto Miura, Kokubunji, JP;
Isao Suzumura, Kokubunji, JP;
Katsuyoshi Washio, Tokorozawa, JP;
Hitachi, Ltd., Tokyo, JP;
Abstract
An (SiGe)C layer having a stoichiometric ratio of about 1:1 is locally formed on an Si layer, a large forbidden band width semiconductor device is prepared inside the layered structure thereof and an Si semiconductor integrated circuit is formed in the regions not formed with the layered structure, whereby high frequency high power operation of the device is enabled by the large forbidden band width semiconductor device and high performance is attained by hybridization of the Si integrated circuit.