The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2006
Filed:
Nov. 09, 2001
Minoru Niigaki, Hamamatsu, JP;
Kazutoshi Nakajima, Hamamatsu, JP;
Minoru Niigaki, Hamamatsu, JP;
Kazutoshi Nakajima, Hamamatsu, JP;
Hamamatsu Photonics K.K., Shizuoka, JP;
Abstract
Multilayer films (to) containing a light absorption layer () are formed on a GaAs substrate. After laminating the GaAs substrate () and a glass substrate () so that an uppermost surface film () of the multilayer film and the glass substrate () may come into contact with each other, by pressurizing between the GaAs substrate () and the glass substrate () and heating them together, both substrates () and () are fusion-bonded. Next, the GaAs substrate () and the buffer layer () are first removed, and then the etch stop layer () is removed. Then, while coming into contact with the light absorption layer (), comb-type Schottky electrodes () and (), which are mutually apart, are formed.