The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2006
Filed:
Aug. 17, 2005
Takahisa Hayashi, Tokyo, JP;
Takahisa Hayashi, Tokyo, JP;
Oki Electric Industry Co., Ltd., Tokyo, JP;
Abstract
A method of producing a ferroelectric capacitor includes preparing a semiconductor substrate having MOSFETs with an impurity diffused area in a memory cell area and a peripheral circuit area; forming a first interlayer insulating film on the semiconductor substrate; forming a conductive plug in the first interlayer insulating film to be electrically connected to the impurity diffused area; forming a second interlayer insulating film on the first interlayer insulating film; removing a portion of the second interlayer insulating film in the memory cell area to expose the first interlayer insulating film and the conductive plug; laminating a first conductive layer, a ferroelectric layer, and a second conductive layer sequentially on the first interlayer insulating film and the second interlayer insulating film to form a capacitor forming laminated film; forming an etching mask on the capacitor forming laminated film; and etching the capacitor forming laminated film to form a ferroelectric capacitor.