The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 22, 2006

Filed:

Apr. 27, 2001
Applicants:

Frederic Nguyen Van Dau, Palaiseau, FR;

Henri Jaffres, Orsay, FR;

Daniel Lacour, Paris, FR;

Inventors:

Frederic Nguyen Van Dau, Palaiseau, FR;

Henri Jaffres, Orsay, FR;

Daniel Lacour, Paris, FR;

Assignee:

Thales, Paris, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11B 5/127 (2006.01);
U.S. Cl.
CPC ...
Abstract

The invention relates to magnetic field sensors in which magnetoresistance is used as the physical phenomenon for detecting and measuring the magnetic field. It consists in producing a stack comprising a first ferromagnetic layer (), an insulating layer (), a second ferromagnetic layer () and an antiferromagnetic layer (). The two ferromagnetic layers exhibit crossed magnetic anisotropies and form with the insulating layer a tunnel junction. The anisotropy of the first layer is obtained from the shape energy of the substrate on which this first layer rests and which is slightly misoriented with respect thereto. The anisotropy of the second layer is obtained by the action of the antiferromagnetic layer.


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