The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2006
Filed:
Dec. 09, 2004
David Tester, Swindon, GB;
Gary Hague, Shrivenham, GB;
Jorg Medwed, Emmering, DE;
Dialog Semiconductor GmbH, Kirchheim/Teck-Nabern, DE;
Abstract
An accurate high current mirror circuit produces a mirrored current that matches an input current to produce an accuracy at the output of a subsequent stage of amplification of greater than 0.01%. A plurality of transistor devices are arranged in a symmetrical configuration and divided into two groups. The transistors in each of the two groups are connected in parallel to produce a high mirror current from a high input current. A distribution of a source voltage produces the same source voltage at each of the plurality of transistors. An input current metallization and a mirror current metallization are formed within the symmetrical configuration to have a same value of impedance. A plurality of P-channel transistors within the current mirror circuit control a voltage of a point on the input metallization to be the same as a reference voltage, thus causing the mirror current to be referenced around the reference voltage.