The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2006
Filed:
Dec. 23, 2003
Carlo Caimi, Cinisello Balsamo, IT;
Paolo Caprara, Milan, IT;
Valentina Tessa Contin, Milan, IT;
Davide Merlani, Monza, IT;
Carlo Caimi, Cinisello Balsamo, IT;
Paolo Caprara, Milan, IT;
Valentina Tessa Contin, Milan, IT;
Davide Merlani, Monza, IT;
STMicroelectronics S.r.l., Agrate Brianza, IT;
Abstract
A MOS device has: a semiconductor body defining a surface; a stack on top of the semiconductor body; and a passivation layer on top of the semiconductor body and covering the stack. The stack is formed by a first polysilicon region and by a second polysilicon region arranged on top of one another and separated by an intermediate dielectric region. An electrical connection region extends through the passivation layer as far as the surface of the semiconductor body laterally with respect to, and in contact with, the first and the second polysilicon regions so as to contact them electrically.