The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2006
Filed:
Dec. 22, 2003
Hiroki Muraoka, Hyogo-ken, JP;
Hidetoshi Nakanishi, Hyogo-ken, JP;
Tetsujiro Tsunoda, Saitama-ken, JP;
Shinichi Umekawa, Kanagawa-ken, JP;
Hiroki Muraoka, Hyogo-ken, JP;
Hidetoshi Nakanishi, Hyogo-ken, JP;
Tetsujiro Tsunoda, Saitama-ken, JP;
Shinichi Umekawa, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device with high turn off capability includes a plurality of stripe trench lines which are provided in each of adjacent cell regions of a semiconductor layer in parallel and extended from one cell region toward the other cell region, a gate insulating film formed in each of the trench lines, and a gate electrode embedded in each of the trench lines with the gate insulating film interposed therebetween. In this semiconductor device, in each of the cell regions, part of adjacent ends of the plurality of trench lines on a side of the other cell region are connected to each other by connecting portions, and portions between the remaining adjacent ends are open. Moreover, at least one of the connecting portions of one cell region faces one of the open portions of the other cell region.