The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2006
Filed:
Nov. 05, 2002
Mitsumasa Koyanagi, Natori, JP;
Mitsumasa Koyanagi, Natori, JP;
ZyCube Co., Ltd., Tokyo, JP;
Abstract
The semiconductor device is capable of coping with speedup of operation using a low dielectric constant material film other than silicon. The base () formed by the substrate () and the low dielectric constant material film () whose relative dielectric constant is lower than silicon is provided. The semiconductor element layer including the MOS transistor () is adhered onto the surface of the base () for stacking. The transistor () is formed by using the island-shaped single-crystal Si film () and buried in the insulator films (), () and (). The multilayer wiring structure () is formed on the semiconductor element layer and is electrically connected to the transistor (). The electrode () functioning as a return path for the signals is formed on the back surface of the base (). Instead of forming the electrode () on the base (), the electrodes (A) may be arranged on the back surface of the base (A), configuring the base (A) as an interposer.