The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2006
Filed:
Dec. 27, 2002
Won-jong Kwon, Daejeon, KR;
Min-jin Ko, Daejeon, KR;
Gwi-gwon Kang, Seoul, KR;
Dong-seok Shin, Seoul, KR;
Myung-sun Moon, Daejeon, KR;
Jung-won Kang, Seoul, KR;
Hae-young Nam, Cheongju, KR;
Young-duk Kim, Daejeon, KR;
Bum-gyu Choi, Daejeon, KR;
Won-Jong Kwon, Daejeon, KR;
Min-Jin Ko, Daejeon, KR;
Gwi-Gwon Kang, Seoul, KR;
Dong-Seok Shin, Seoul, KR;
Myung-Sun Moon, Daejeon, KR;
Jung-Won Kang, Seoul, KR;
Hae-Young Nam, Cheongju, KR;
Young-Duk Kim, Daejeon, KR;
Bum-Gyu Choi, Daejeon, KR;
LG Chem, Ltd., , KR;
Abstract
The present invention relates to a nanopore-forming material for forming an insulating film for a semiconductor device, and more particularly to a nanopore-forming organic material containing a triazine functional group and preparation thereof, and a composition for forming an insulating film for a semiconductor device comprising the same, an insulating film using the same, and a manufacturing process thereof. The pore-forming material of the present invention is easy to synthesize, and the molecular weight, molecular structure, and microenvironment thereof are easy to control, and thus it is suitable for a nanopore-forming material.