The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2006
Filed:
Nov. 17, 2004
Steven E. Laux, Yorktown Heights, NY (US);
Steven E. Laux, Yorktown Heights, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A technique for selecting an optimal quantization direction for a given transport direction in a semiconductor device such as a field effect transistor (FET), a method for preparing a wafer for fabricating such a semiconductor device, and the semiconductor device fabricated by the method. A switching time is calculated for different candidate quantization directions, and for a given current transport direction. The quantization direction that results in the lowest switching time is then determined. In a specific example, Ge nFET performance is enhanced by 12% using the [1 1 0] and [{overscore (4)} 4 21] crystallographic directions for transport and quantization, respectively. Quantization in the [{overscore (1)} 1 0] direction was previously considered optimal.