The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2006
Filed:
Feb. 08, 2002
Richard E. Smalley, Houston, TX (US);
Robert H. Hauge, Houston, TX (US);
Wan-ting Chiang, Ponca City, OK (US);
Yuemei Yang, Houston, TX (US);
Kenneth A. Smith, Houston, TX (US);
Wilber Carter Kittrell, Houston, TX (US);
Zhenning Gu, Houston, TX (US);
Richard E. Smalley, Houston, TX (US);
Robert H. Hauge, Houston, TX (US);
Wan-Ting Chiang, Ponca City, OK (US);
Yuemei Yang, Houston, TX (US);
Kenneth A. Smith, Houston, TX (US);
Wilber Carter Kittrell, Houston, TX (US);
Zhenning Gu, Houston, TX (US);
William Marsh Rice University, Houston, TX (US);
Abstract
The present invention relates to an all gas-phase process for the purification of single-wall carbon nanotubes and the purified single-wall carbon nanotube material. Known methods of single-wall carbon nanotube production result in a single-wall carbon nanotube product that contains single-wall carbon nanotubes in addition to impurities including residual metal catalyst particles and amounts of small amorphous carbon sheets that surround the catalyst particles and appear on the sides of the single-wall carbon nanotubes and 'ropes' of single-wall carbon nanotubes. The purification process removes the extraneous carbon as well as metal-containing residual catalyst particles. The process comprises oxidation of the single-wall carbon nanotube material, reduction and reaction of a halogen-containing gas with the metal-containing species. The oxidation step may be done dry or in the presence of water vapor. The present invention provides a scalable means for producing high-purity single-wall carbon nanotube material.