The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2006

Filed:

Oct. 15, 2003
Applicants:

Atsushi Miyazaki, Nara, JP;

Akitsugu Hatano, Nara, JP;

Osamu Sakai, Nara, JP;

Inventors:

Atsushi Miyazaki, Nara, JP;

Akitsugu Hatano, Nara, JP;

Osamu Sakai, Nara, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/64 (2006.01);
U.S. Cl.
CPC ...
Abstract

A plasma process apparatus for performing a plasma process on a target substrateincludes a process chamberin which the target substrateis installed, a gas inletfor introducing a gas into the process chamber, and a plasma discharge production sectionprovided in the process chamber. The plasma discharge production sectionincludes a first electrodeand a second electrodethat is closer to the target substratethan the first electrodeis. Only surfaces of the first electrodeand the second electrodewhich can be seen in the normal line direction of the target substratefunction as plasma discharge surfaces. Thus, a high quality film is realized even at a low target substrate temperature, and the film formation is performed with high gas dissociation efficiency.


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