The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2006

Filed:

Jun. 15, 2004
Applicants:

Wei-lin Chen, Taipei, TW;

Hung-sheng HU, Kaohsiung, TW;

In-yao Lee, Taipei, TW;

Inventors:

Wei-Lin Chen, Taipei, TW;

Hung-Sheng Hu, Kaohsiung, TW;

In-Yao Lee, Taipei, TW;

Assignee:

BENQ Corporation, Taoyuan, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B21D 53/00 (2006.01); G01D 15/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for fabricating a monolithic fluid injection device. The method includes providing a substrate with a patterned sacrificial layer thereon. Next, a patterned support layer and a patterned resistive layer, as a heating element, are formed on the substrate sequentially. A patterned insulating layer having a heating element contact via and a first opening is formed on the support layer. A patterned conductive layer is formed on the support layer and fills the heating element contact via as a signal transmitting circuit. A patterned protective layer having a signal transmitting circuit contact via and a second opening corresponding to the first opening is formed on the substrate. A manifold is formed by wet etching the back of the substrate to expose the sacrificial layer. A chamber is formed by removing the sacrificial layer in the wet etching process. Finally, an opening connecting the chamber is formed by etching the support layer along the second opening.


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