The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2006
Filed:
Dec. 04, 2000
Henning Riechert, Ottobrunn, DE;
Anton Yurevitch Egorov, St. Petersburg, RU;
Henning Riechert, Ottobrunn, DE;
Anton Yurevitch Egorov, St. Petersburg, RU;
Infineon Technologies AG, , DE;
Abstract
The active layer () and the barrier layers () contain a group III component, a group V component and nitrogen, whereby the active layer is a quaternary material and the barrier layers are ternary materials, or, in order to match the lattice properties of the active layer to the barrier layers, the nitrogen content in the barrier layers is higher. The active layer is preferably InGaAsN, the barrier layers are InGaAsN with higher nitrogen content or GaAsN. Superlattices may exist in the barrier layers, for example, series of thin layers of InGaAsNwith varying factors x and y, where, in particular, x=0 and y=1.