The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2006
Filed:
Mar. 16, 2000
Applicant:
Koji Suzuki, Aichi, JP;
Inventor:
Koji Suzuki, Aichi, JP;
Assignee:
Sanyo Electric Co., Ltd., , JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/01 (2006.01);
U.S. Cl.
CPC ...
Abstract
On a glass substrate (), an insulating protective layer () comprising SiOfilm is formed, and an active layer () comprising a p-Si film () is formed thereon. Further, a first gate insulating film () comprising an SiN film which serves as a lower layer and a second gate insulating film () comprising an SiN film which serves as an upper layer are stacked thereon. The second gate insulating layer () is then removed by etching with a gate electrode () formed thereon acting as a mask. Thus, ions can be doped only through the first gate insulating film () to the p-Si film () with a low acceleration energy.