The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2006
Filed:
Mar. 25, 2004
Applicants:
Masanobu Senda, Aichi-ken, JP;
Jun Ito, Aichi-ken, JP;
Kazuki Nishijima, Aichi-ken, JP;
Toshimasa Hayashi, Aichi-ken, JP;
Inventors:
Masanobu Senda, Aichi-ken, JP;
Jun Ito, Aichi-ken, JP;
Kazuki Nishijima, Aichi-ken, JP;
Toshimasa Hayashi, Aichi-ken, JP;
Assignee:
Toyodaa Gosei Co., Ltd., Aichi-ken, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/15 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor light emitting element that is made by using the lateral growth function of semiconductor crystal while providing an ELO mask on a crystal growth surface of a crystal growth substrate. At least part of a sidewall of the ELO mask is provided with an inclined plane that is inclined to the crystal growth surface such that the semiconductor crystal to be formed on the ELO mask substantially has no void.