Cmos image sensor using shared transistors between pixels with dual pinned photodiode

Abstract

A CMOS image sensor that has reduced transistor count is disclosed. The individual pixels are formed by a pinned photodiode and a transfer transistor. An output node receives the signal from the photodiode via the transfer transistor. The output node is shared between multiple pixels. Further, a reset transistor is coupled between a selectable low voltage rail Vor a high voltage reference Vand the output node. The gate of an output transistor is then coupled to the output node. Both the reset transistor and output transistors are shared between multiple pixels.