The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2006
Filed:
Dec. 19, 2003
Sang-tae Ahn, Ichon, KR;
Dong-sun Sheen, Ichon, JP;
Seok-pyo Song, Ichon, JP;
Hynix Semiconductor Inc., , KR;
Abstract
A method for forming a flowable dielectric layer using a barrier layer on sidewalls of patterned flowable dielectrics, thereby preventing a bridge phenomenon between adjacent contact plugs. The method includes steps of: forming patterns on a semiconductor substrate, wherein narrow and deep gaps are formed therebetween; forming a flowable dielectric layer so as to fill the gaps between the patterns; carrying out an annealing process for densifying the flowable dielectric layer and removing moisture therein; forming contact holes by selectively etching the flowable dielectric layer so as to expose predetermined portions of the semiconductor substrate; forming a barrier layer on sidewalls of the contact holes for preventing micro-pores in the flowable dielectric layer; carrying out a cleaning process in order to remove native oxides and defects on the semiconductor substrate; and forming contact plugs by filling a conductive material into the contact plugs.